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BSC026N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 23A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC026N08NS5ATMA1
- Description：MOSFET N-CH 80V 23A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs：92 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6800 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC026N08NS5ATMA1
Single FETs, MOSFETs Overview
The BSC026N08NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-state resistance of 2.6 mΩ at VGS=10 V and ID=50 A, supporting a continuous drain current of 184 A at TC=25 °C. The device utilizes a PG-TDSON-8 package with a thermal resistance (junction-case) of 0.5 K/W. Key dynamic parameters include a total gate charge of 74 nC and an output charge of 88 nC. It is qualified according to JEDEC standards for target applications.
Single FETs, MOSFETs Feature Summary
- Optimized for synchronous rectification in server and desktop environments
- Superior thermal resistance characteristics
- 100% avalanche tested for reliability
Single FETs, MOSFETs Applications
- Synchronous rectification in server power supplies
- Desktop power supply units
- Target applications requiring JEDEC qualification
Single FETs, MOSFETs Procurement Notes
Verify the component authenticity by checking the manufacturer marking '026N08NS' against the datasheet specifications. Confirm the package type is PG-TDSON-8 and ensure the ordering code matches the required suffix. Cross-reference the RoHS compliance status and lead-free plating details with the latest official documentation before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and high current handling capabilities within an 80 V system. The low thermal resistance facilitates efficient heat dissipation in compact layouts. Ensure the gate drive voltage supports the specified threshold range and that the PCB layout accommodates the specific PG-TDSON-8 footprint dimensions provided in the package outline.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family from Infineon Technologies, designed for high-efficiency power conversion. It represents an evolution in silicon MOSFET technology, focusing on reducing switching losses and improving thermal performance compared to previous generations. The series is widely used in modern power management solutions where size and efficiency are critical constraints.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the 80 V rating, PG-TDSON-8 package, and similar RDS(on) and Qg values. Verify pinout compatibility and thermal characteristics. Consult the official replacement list or contact the manufacturer for validated alternatives.
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