BSC027N03S G

Single FETs, MOSFETs Overview

The BSC027N03S G is an OptiMOS™2 N-channel power MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a maximum on-resistance of 2.7 mΩ at 10 V gate drive. The device supports a continuous drain current of 100 A at 25 °C case temperature and handles pulsed currents up to 200 A. Key electrical parameters include a gate threshold voltage ranging from 1.2 V to 2 V, total gate charge of 38 nC to 51 nC, and avalanche energy capability of 800 mJ. Thermal resistance from junction to case is 1.4 K/W via the bottom pad.

Single FETs, MOSFETs Feature Summary

• Optimized for notebook DC/DC converters with fast switching capabilities
• Features excellent gate charge versus on-resistance product (FOM)
• Rated for avalanche energy and high dv/dt performance
• Logic level operation suitable for low-voltage control

Single FETs, MOSFETs Applications

• Notebook DC/DC converters
• Switching mode power supplies (SMPS)
• Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the marking code '27N03S' on the PG-TDSON-8 package against official Infineon documentation. Confirm RoHS compliance and halogen-free status per IEC61249-2-21 requirements. Ensure thermal management design accounts for the specified junction-to-case resistance values to maintain safe operating temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance and high current handling in compact surface-mount packages. Consider the logic-level gate drive compatibility for direct interfacing with standard control circuits. Evaluate thermal constraints based on the specific PCB footprint and cooling area available, as thermal resistance varies significantly between bottom-pad and top-side heat dissipation methods.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™2 family of power transistors designed for efficient power conversion. It utilizes silicon technology to deliver superior thermal resistance and low on-state losses compared to previous generations. The PG-TDSON-8 package provides a robust solution for space-constrained applications while maintaining high power density and reliability under demanding electrical conditions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series may include BSC027N03LS G or BSC027N04LS G, though voltage ratings and gate charge characteristics differ. Verify pinout compatibility and thermal performance before substitution. Cross-referencing with newer OptiMOS generations requires careful evaluation of switching speeds and gate drive requirements.