BSC030N04NSGATMA1

$1.27

Description：MOSFET N-CH 40V 23A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:164422f8dbf5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC030N04NSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 23A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC030N04NSGATMA1

Description：MOSFET N-CH 40V 23A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 49µA
Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4900 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC030N04NSGATMA1

BSC030N04NSGATMA1

Single FETs, MOSFETs Overview

The BSC030N04NSGATMA1 is an N-channel OptiMOS 3 power transistor with a 40 V drain-source voltage rating. It features a maximum on-resistance of 3.0 mΩ and supports a continuous drain current of 132 A at 25°C case temperature. The device utilizes a PG-TDSON-8 package, providing excellent thermal resistance of 1.5 K/W junction-to-case. Key electrical parameters include a gate threshold voltage range of 2 to 4 V and a total gate charge of 46 nTypical.

Single FETs, MOSFETs Feature Summary

Optimized technology specifically designed for DC/DC converters and fast switching applications in SMPS.
Superior thermal resistance characteristics combined with very low on-resistance for efficient power handling.
Features an excellent figure of merit (FOM) resulting from the optimized product of gate charge and RDS(on).
Qualified according to JEDEC standards for target applications and includes 100% avalanche testing.

Single FETs, MOSFETs Applications

Fast switching MOSFETs for Switching Mode Power Supplies (SMPS)
DC/DC converter circuits
Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and marking specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Ensure compatibility with the specified PG-TDSON-8 footprint during procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in DC/DC conversion due to its low RDS(on) and optimized gate charge. Consider the thermal management capabilities provided by the TDSON-8 package when evaluating heat dissipation requirements. Verify that the 40 V breakdown voltage aligns with the system's operating voltage margins.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of power transistors from Infineon Technologies. It is engineered to provide enhanced performance in power conversion applications compared to previous generations. The series focuses on minimizing switching losses and conduction losses through advanced silicon technology.