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BSC030N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC030N08NS5ATMA1
- Description：MOSFET N-CH 80V 100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs：76 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5600 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC030N08NS5ATMA1
Single FETs, MOSFETs Overview
The BSC030N08NS5ATMA1 is an N-channel OptiMOS™5 power transistor with a drain-source breakdown voltage of 80 V. It features a maximum on-state resistance of 4.5 mΩ at VGS=6V and ID=50A, and a continuous drain current rating of 161 A at TC=25°C. The device operates within a junction temperature range of -55°C to +150°C and utilizes a PG-TDSON-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Fully qualified according to JEDEC standards for industrial applications
- Optimized for high-performance synchronous rectification in switching mode power supplies
- Features superior thermal resistance characteristics
- Includes an internal body diode
Single FETs, MOSFETs Applications
- Synchronous rectification in high-performance SMPS
- Industrial electronic systems requiring JEDEC qualification
Single FETs, MOSFETs Procurement Notes
Verify the component against the official Infineon datasheet revision 2.5 (dated 2024-07-09). Confirm that the specific ordering code matches the required PG-TDSON-8 package and ensure compliance with RoHS and halogen-free requirements as specified in the product documentation.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust industrial-grade reliability and low conduction losses. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance values to ensure operation remains within the absolute maximum ratings under all expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™5 family of power transistors manufactured by Infineon Technologies. It is designed to provide enhanced performance in terms of on-resistance and switching efficiency compared to previous generations, specifically targeting demanding industrial power conversion applications.
Single FETs, MOSFETs Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify electrical parameters such as RDS(on) and VDS before substituting with other N-channel MOSFETs to ensure circuit compatibility.
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