BSC032N03S

Single FETs, MOSFETs Overview

The BSC032N03S is an N-channel OptiMOS®2 power transistor in a P-TDSON-8 package. It features a drain-source breakdown voltage of 30 V and a maximum on-state resistance of 3.2 mΩ at VGS=10 V. The device supports a continuous drain current of 50 A and a pulsed current of 200 A. Key electrical parameters include a gate threshold voltage range of 1.2 V to 2 V, total gate charge of 29 nC to 39 nC, and a single-pulse avalanche energy rating of 550 mJ. Thermal characteristics specify a junction-to-case resistance of 1.6 K/W.

Single FETs, MOSFETs Feature Summary

• Optimized for fast switching applications in synchronous rectification
• Logic level operation with low gate threshold voltage
• Rated for avalanche energy and high dv/dt reverse diode recovery

Single FETs, MOSFETs Applications

• Notebook DC/DC converters
• Synchronous rectification in point-of-load modules
• General purpose switching mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (Rev. 1.22) against the manufacturing date code to ensure alignment with thermal and electrical specifications. Confirm that the P-TDSON-8 footprint matches the design requirements, as thermal performance depends heavily on the copper area connected to the drain pad. Ensure sourcing channels provide original Infineon packaging to maintain component integrity.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V logic-level N-channel MOSFET is required for high-efficiency synchronous rectification. The low RDS(on) and optimized gate charge make it suitable for high-frequency DC/DC conversion. Consider the 1.6 K/W thermal resistance for heat dissipation calculations and verify compatibility with standard TDSON-8 PCB footprints during the layout phase.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS®2 family, designed specifically for notebook and portable electronics power management. It utilizes silicon technology to balance conduction losses with switching speed. The P-TDSON-8 package provides a compact solution for surface-mount assembly while offering superior thermal performance compared to traditional plastic packages.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS®2 devices such as BSC022N03S or BSC044N03S if different current ratings are needed. Verify pinout compatibility and thermal resistance values before substituting. Ensure the replacement maintains the 30 V breakdown voltage and logic-level gate drive requirements.