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BSC034N10LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 19A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC034N10LS5ATMA1
- Description：MOSFET N-CH 100V 19A/100A TDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6500 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC034N10LS5ATMA1
Single FETs, MOSFETs Overview
The BSC034N10LS5ATMA1 is an OptiMOS™ 5 N-channel power MOSFET with a 100 V drain-source voltage rating. It features a maximum on-state resistance of 3.4 mΩ at VGS=10V and supports a continuous drain current of 156 A at TC=25°C. The device utilizes PG-TDSON-8 packaging, providing superior thermal resistance with a junction-to-case value of 0.5 °C/W. Key dynamic parameters include a total gate charge of 37 nC (0V to 4.5V) and an output charge of 91 nC. It is fully qualified for industrial applications per JEDEC standards.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switching mode power supplies
- Features 100% avalanche testing for enhanced ruggedness
- Logic-level operation allows direct drive from standard logic interfaces
- Compliant with RoHS directives and halogen-free requirements
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- High-efficiency switching mode power supply designs
- Industrial power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix matches the required tape-and-reel configuration. Confirm that the component meets the necessary environmental certifications for your target market. Ensure the procurement channel provides valid traceability documentation consistent with Infineon's quality standards for industrial-grade components.
Single FETs, MOSFETs Selection Notes
Select this component when low conduction losses are critical in compact power stages. The TDSON-8 package offers a balance between current handling capability and board space efficiency. Consider the thermal derating curves if operating above 25°C case temperature to ensure safe continuous current levels.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family, designed for improved efficiency over previous generations. It serves as a single-chip solution for low-voltage, high-current applications where fast switching and low gate charge are essential for reducing overall system power consumption.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the 100 V rating, PG-TDSON-8 footprint, and similar RDS(on) specifications. Verify pinout compatibility and thermal characteristics before substitution.
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