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BSC037N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 100A TDSON. Review the specifications below when checking this part for your BOM.
The BSC037N08NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source breakdown voltage of 80 V. It features a maximum on-state resistance of 3.7 mΩ and supports a continuous drain current of 136 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to 175°C. Key dynamic parameters include a total gate charge of 46 nC and an output charge of 56 nC. It utilizes a PG-TDSON-8 surface-mount package.
Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm packaging details. Ensure that the component meets all applicable RoHS compliance requirements and halogen-free specifications as defined by IEC61249-2-21 before final procurement integration.
Select this component when designing circuits requiring robust industrial-grade reliability and high thermal performance. The 175°C rating provides operational flexibility under elevated temperatures, while the low on-resistance minimizes conduction losses in high-current synchronous rectification topologies.
This part belongs to the OptiMOS™ 5 family from Infineon Technologies, designed specifically for advanced power management applications. The series integrates silicon technology optimized for efficiency and ruggedness, utilizing the PG-TDSON-8 package to deliver high power density in a compact footprint suitable for modern electronic designs.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on matching electrical ratings without confirming pinout compatibility and thermal characteristics.
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