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BSC040N10NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC040N10NS5ATMA1
- Description：MOSFET N-CH 100V 100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5300 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC040N10NS5ATMA1
Single FETs, MOSFETs Overview
The BSC040N10NS5 is an OptiMOS 5 N-channel power transistor with a 100 V drain-source voltage rating. It features a maximum on-state resistance of 4.0 mΩ and supports a continuous drain current of 136 A at 25 °C case temperature. The device utilizes a PG-TDSON-8 package, providing superior thermal resistance with a junction-to-case value of 0.9 K/W. Key dynamic parameters include a total gate charge of 72 nΩ and an output charge of 100 nC. It is qualified according to JEDEC standards and includes 100% avalanche testing.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switch-mode power supplies
- Features superior thermal resistance via the PG-TDSON-8 package design
- Includes monolithic integrated Schottky-like diode characteristics
- Qualified according to JEDEC standards for target applications
Single FETs, MOSFETs Applications
- Synchronous rectification in high-performance SMPS
- Power conversion circuits requiring low on-state resistance
- Applications utilizing PG-TDSON-8 surface-mount packaging
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code matches the required package variant. Confirm that the component meets all applicable JEDEC qualification requirements for the intended environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V N-channel MOSFET with low conduction losses is required. The PG-TDSON-8 package offers a compact footprint with enhanced heat dissipation capabilities compared to standard SO-8 packages. Consider the 4.0 mΩ maximum RDS(on) for efficiency optimization in high-current applications.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS 5 family of power transistors. The series focuses on improving performance for synchronous rectification applications. The technology integrates advanced cell structures to minimize on-state resistance while maintaining robust avalanche capability.
Single FETs, MOSFETs Replacement Considerations
Check datasheet specifications for compatible alternatives within the OptiMOS 5 family. Verify pinout compatibility and thermal characteristics before substitution.
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