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BSC040N10NS5SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 140A WSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC040N10NS5SCATMA1
- Description：MOSFET N-CH 100V 140A WSON-8
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5300 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-WSON-8-2
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for BSC040N10NS5SCATMA1
Single FETs, MOSFETs Overview
The BSC040N10NS5SC is an OptiMOS™ 5 N-channel power transistor rated at 100 V. It features a maximum drain-source on-state resistance of 4.0 mΩ and supports a continuous drain current of 140 A at 25 °C. The device utilizes a dual-side cooled PG-VSON-8 or PG-WSON-8 package, providing a junction-to-case bottom thermal resistance of 0.9 K/W maximum. It operates within a temperature range of -55 °C to +175 °C.
Single FETs, MOSFETs Feature Summary
- Dual-side cooled package design for superior thermal performance
- Qualified for industrial applications per JEDEC standards
- 100% avalanche tested for enhanced reliability
- Lead-free plating compliant with RoHS and halogen-free
Single FETs, MOSFETs Applications
- High-performance synchronous rectification
- Switch-mode power supplies (SMPS)
- Industrial power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant required, as the part number covers both PG-VSON-8 and PG-WSON-8 configurations. Confirm that the application environment aligns with the specified industrial qualification standards. Ensure PCB layout accommodates the dual-side cooling requirements to achieve the stated thermal resistance values. Validate gate drive parameters against the provided dynamic characteristics.
Single FETs, MOSFETs Selection Notes
Select this component when low conduction losses are critical due to its 4.0 mΩ Rds(on) rating. The high continuous current capability makes it suitable for demanding power stages. Consider the dual-side cooling package if efficient heat dissipation from both top and bottom surfaces is necessary for the system's thermal management strategy.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's OptiMOS™ 5 family, designed for high-efficiency power switching. It represents an evolution in silicon MOSFET technology, focusing on minimizing on-state resistance while maintaining robust avalanche ruggedness. The packaging integrates advanced thermal pathways to support high-power density designs.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the 100 V rating, 4.0 mΩ maximum Rds(on), and compatible PG-VSON-8/PG-WSON-8 footprint.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
