BSC042N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC042N03MSGATMA1 is an N-channel OptiMOS™3 Power-MOSFET designed for low-voltage applications. It features a PG-TDSON-8 package with a drain-source breakdown voltage (VDS) of 30 V and a maximum on-resistance (RDS(on)) of 5.4 mΩ at VGS=4.5 V. The device supports a continuous drain current (ID) of up to 93 A at TC=25°C and handles pulsed currents of 372 A. Key electrical parameters include a gate threshold voltage of 1–2 V, total gate charge (Qg) of 20–27 nC, and avalanche energy rating of 40 mJ. Thermal resistance from junction to case is 2.2 K/W.

Single FETs, MOSFETs Feature Summary

• Optimized for 5V driver applications in notebooks, VGA circuits, and point-of-load converters
• Features very low on-resistance and excellent gate charge product for high-frequency switching power supplies
• Includes built-in reverse diode and superior thermal resistance characteristics
• Qualified according to JEDEC standards and tested for avalanche capability

Single FETs, MOSFETs Applications

• Notebook power management systems
• Video graphics array (VGA) power delivery
• Point-of-load (POL) converter designs
• High-frequency synchronous buck converters

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code '042N03MS' on the PG-TDSON-8 package against official Infineon documentation. Confirm RoHS compliance and halogen-free status as specified in the datasheet. Ensure the ordering suffix matches the required tape and reel configuration for automated assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when designing for 5V logic-level drivers requiring low conduction losses. The specific RDS(on) limits at 4.5V and 10V drive voltages are critical for efficiency calculations. Consider the thermal resistance values for PCB layout planning to ensure safe operating area compliance under continuous and pulsed load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™3 family of low-voltage power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology to achieve high performance in a compact surface-mount package. The series is engineered to balance switching speed and conduction loss for modern portable electronics and efficient power conversion architectures.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS™3 devices such as BSC030N03MSGATMA1 or BSZ100N03MSGATMA1 if different current ratings or voltage thresholds are required. Verify pinout compatibility and thermal characteristics before substituting to maintain circuit integrity.