BSC042NE7NS3GATMA1

Single FETs, MOSFETs Overview

The BSC042NE7NS3GATMA1 is a single N-channel enhancement mode MOSFET from the OptiMOS 3 series, manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. The device features a drain-source voltage (Vds) of 75 V and a continuous drain current (Id) of 100 A at 25°C. Its maximum on-resistance (Rds(on)) is specified at 3.7 mΩ. The gate-source voltage range extends from -20 V to +20 V, with a typical threshold voltage of 2.3 V and total gate charge of 69 nC. Power dissipation reaches 125 W, operating within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides optimized performance for low-voltage power switching applications.
• TDSON-8 package design facilitates efficient thermal management and compact PCB integration.
• Enhancement mode operation ensures reliable switching characteristics with defined threshold levels.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power distribution units

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix GATMA1 to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference datasheet parameters against specific application requirements to validate thermal and electrical limits.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in a small form factor. Compare Rds(on) and gate charge values against alternative packages like D2PAK for thermal performance trade-offs. Ensure driver capabilities match the 69 nC gate charge requirement for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of N-channel MOSFETs designed for general-purpose power switching. It shares the TDSON-8 footprint with other variants in the series, such as BSC036NE7NS3G, allowing for potential pin-compatible upgrades or downgrades depending on current and resistance needs.

Single FETs, MOSFETs Replacement Considerations

BSC036NE7NS3G offers lower on-resistance but higher current capacity in the same package. BSC070N10NS3G provides similar voltage ratings with different current specifications. Verify thermal dissipation requirements when substituting these alternatives.