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BSC0503NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 22A/88A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0503NSIATMA1
- Description：MOSFET N-CH 30V 22A/88A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0503NSIATMA1
Single FETs, MOSFETs Overview
The BSC0503NSI is an OptiMOS5 N-channel Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 3.0 mΩ at VGS=4.5 V and supports continuous drain currents up to 88 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. Key dynamic parameters include a total gate charge of 7.1 nC (0V to 4.5V) and an output charge of 10.6 nC. Thermal resistance from junction to case is 3.5 K/W, and the component operates within a temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converters
- Features a monolithically integrated Schottky-like diode
- Guaranteed 100% avalanche testing
Single FETs, MOSFETs Applications
- High-performance buck converters
- Automotive applications requiring JEDEC qualification
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the datasheet table to ensure correct package and marking alignment. Confirm RoHS compliance and halogen-free status requirements match project specifications. Check for any necessary written approvals if the component is intended for life-support or critical automotive safety systems.
Single FETs, MOSFETs Selection Notes
Select this component when low RDS(on) at logic-level gate voltages is required for efficient switching. The integrated Schottky-like diode simplifies synchronous rectification designs. Ensure thermal management meets the specified RthJC limits for the target current load.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS5 family of power MOSFETs designed by Infineon Technologies. It utilizes silicon technology in a PG-TDSON-8 surface-mount package. The series targets applications demanding high efficiency and robust performance in compact form factors.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for verified substitutes. Do not assume cross-compatibility based solely on voltage or current ratings without verifying pinout and thermal characteristics.
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