BSC050N04LSGATMA1

Single FETs, MOSFETs Overview

The BSC050N04LS G is an N-channel OptiMOS™3 power transistor designed for high-efficiency switching applications. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and a continuous drain current of 85 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 5 mΩ at VGS=10 V and 7.2 mΩ at VGS=4.5 V. Key electrical parameters include a gate threshold voltage range of 1.2 to 2 V, total gate charge of 36 nC (typical), and a single-pulse avalanche energy rating of 35 mJ. Thermal resistance from junction to case is 2.2 K/W.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically engineered for DC/DC converters and switch-mode power supplies.
• Logic-level gate drive capability allowing efficient control with low gate voltages.
• Superior thermal performance characterized by low junction-to-case thermal resistance.
• Robust reliability ensured through 100% avalanche testing qualification.

Single FETs, MOSFETs Applications

• Switch-mode power supplies (SMPS)
• DC/DC converter circuits
• Synchronous rectification stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and halogen-free certification requirements prior to procurement. Ensure the component version matches the required JEDEC qualification standards for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for synchronous rectification or primary-side switching. The logic-level gate drive makes it suitable for controllers operating at lower voltage levels. Evaluate the thermal management solution based on the specified junction-to-case resistance to ensure operation within the 150 °C maximum junction temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™3 family of power transistors manufactured by Infineon Technologies. The series focuses on minimizing the figure of merit (gate charge multiplied by on-resistance) to enhance efficiency in power conversion systems. The PG-TDSON-8 package provides a compact footprint with enhanced thermal dissipation capabilities compared to standard surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.