SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BSC052N03LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 17A/57A TDSON. Review the specifications below when checking this part for your BOM.
The BSC052N03LS is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 5.2 mΩ at VGS=4.5 V and supports a continuous drain current of 57 A at TC=25°C. The device utilizes a PG-TDSON-8 package, providing a thermal resistance from junction to case of 4.5 K/W. Key dynamic parameters include a total gate charge of 12 nC (VGS=0 to 10 V) and a reverse transfer capacitance of 44 pF.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm that the required package variant matches the intended PCB footprint design. Check for any updated revision history or supplementary application notes relevant to the target operating conditions before finalizing procurement specifications.
Select this component based on its low RDS(on) at logic-level gate voltages and its suitability for synchronous rectification in buck topologies. Evaluate the thermal requirements against the specified junction-to-case resistance. Ensure the gate drive voltage aligns with the threshold and plateau characteristics defined in the electrical data sheet.
This part belongs to Infineon's OptiMOS family of power MOSFETs designed for low-voltage applications. It is manufactured using silicon technology and complies with RoHS standards. The device is qualified according to JEDEC standards for target industrial and consumer electronics applications.
Consult the official datasheet for cross-reference information. Verify pinout compatibility and thermal performance metrics when considering alternative components.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.