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BSC054N04NSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 17A/81A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC054N04NSGATMA1
- Description：MOSFET N-CH 40V 17A/81A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 57W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC054N04NSGATMA1
Single FETs, MOSFETs Overview
The BSC054N04NSGATMA1 is an N-channel OptiMOS™3 power transistor in a PG-TDSON-8 package. It features a drain-source voltage of 40 V and a continuous drain current of 81 A at Tc=25°C. The maximum on-resistance is 5.4 mΩ, with a typical gate charge of 34 nC. Thermal resistance from junction to case is 2.2 K/W via the bottom pad. The device operates within a temperature range of -55°C to +150°C and includes a monolithic reverse diode.
Single FETs, MOSFETs Feature Summary
- Fast switching MOSFET optimized for DC/DC converters
- Excellent gate charge x RDS(on) figure of merit
- Superior thermal resistance with low on-resistance
- 100% avalanche rated
Single FETs, MOSFETs Applications
- Switching Mode Power Supplies (SMPS)
- DC/DC converters
Single FETs, MOSFETs Procurement Notes
Verify component authenticity against Infineon official documentation. Confirm the part number matches the specific marking code '054N04NS' on the PG-TDSON-8 package. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet. Check for any specific JEDEC qualification status relevant to the target application environment.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling in a compact surface-mount footprint. The low thermal resistance facilitates efficient heat dissipation through the exposed pad. Consider the 40V rating and 81A current capacity when designing power stages. Evaluate the gate charge characteristics for switching frequency optimization in synchronous rectification or high-side driver circuits.
Single FETs, MOSFETs Part Context
This component belongs to Infineon's OptiMOS™3 family, designed for low-voltage power switching applications. The PG-TDSON-8 package provides a balance between electrical performance and board space efficiency. The technology focuses on minimizing conduction losses while maintaining robust switching capabilities suitable for modern power management architectures.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 40V rating, TDSON-8 package, and similar thermal/electrical parameters.
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