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BSC057N08NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 16A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC057N08NS3GATMA1
- Description：MOSFET N-CH 80V 16A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：5.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 73µA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3900 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 114W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC057N08NS3GATMA1
Single FETs, MOSFETs Overview
The BSC057N08NS3GATMA1 is a single N-channel enhancement mode power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It is housed in a TDSON-8 surface-mount package and operates with a drain-source voltage of 80 V and a continuous drain current of 100 A at 25°C. The device features a maximum on-resistance of 4.7 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 56 nC, a threshold voltage of 2 V, and a power dissipation capacity of 114 W. The component supports an operating temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS 3 technology integration for optimized performance
- High current handling capability within a compact footprint
- Low on-state resistance for efficient power switching
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix ATMA1 to ensure correct packaging configuration. Confirm that the TDSON-8 pinout matches the target PCB layout requirements. Check for RoHS compliance status through official manufacturer channels before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when high current density is required in a small surface-mount form factor. The 80 V rating suits low-voltage applications where efficiency is critical. Ensure thermal management design accommodates the specified power dissipation limits under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 family of silicon-based N-channel MOSFETs designed for general-purpose power switching. It shares the TDSON-8 package style with other variants in the series but offers specific electrical characteristics tailored for high-current applications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
