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BSC059N03ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 19A/89A TDSON. Review the specifications below when checking this part for your BOM.
The BSC059N03ST is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 19 A at case temperature. The device is housed in a PG-TDSON-8-1 package with a maximum power dissipation of 28 W. Key electrical parameters include a gate-source voltage range of ±20 V and a threshold voltage typically around 1.2 V. The component operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific suffix 'ST' against official Infineon documentation to confirm package type and tape/reel specifications. Ensure compatibility with PG-TDSON-8-1 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's material declaration before procurement.
Select this component for low-voltage, high-efficiency switching applications requiring compact surface-mount packaging. Compare Rds(on) and thermal resistance values against alternative OptiMOS variants to ensure suitability for specific thermal management constraints and current requirements.
This part belongs to the Infineon OptiMOS family, designed for general-purpose power switching. It complements other low-voltage MOSFETs by offering a balance of low on-resistance and fast switching speeds in a small form factor suitable for modern electronic designs.
Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 30 V rating, TDSON-8 footprint, and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.