BSC072N04LDATMA1

Overview

The BSC072N04LDATMA1 is a dual N-channel OptiMOS-T2 power transistor with a 40 V drain-source voltage rating. It features a maximum on-state resistance of 7.2 mΩ at 10 V gate drive and supports a continuous drain current of 20 A. The device utilizes a PG-TDSON-8-4 package, providing a thermal resistance from junction to case of 2.3 °C/W. Total gate charge is typically 39 nC at 10 V.

Feature Summary

• Dual N-channel configuration optimized for synchronous rectification applications
• Logic level operation enabling direct drive from standard logic interfaces
• Fast switching characteristics designed for switch-mode power supply efficiency

Applications

• Synchronous rectification in DC/DC converters
• Switch-mode power supplies (SMPS)
• Industrial control circuits

Procurement Notes

Verify the component against the official Infineon datasheet Rev. 2.0 to confirm technical specifications. Ensure the ordering code matches the required package variant. Confirm compliance with RoHS standards and halogen-free requirements as specified in the product documentation before finalizing procurement.

Selection Notes

Select this component for designs requiring low on-resistance and fast switching in compact footprints. Evaluate the thermal performance based on the specific PCB copper area available, as thermal resistance varies significantly between minimal footprint and larger cooling areas. Consider the logic level threshold for compatibility with the driving circuitry.

Part Context

This part belongs to the OptiMOS-T2 family of power transistors manufactured by Infineon Technologies. It is specifically engineered to provide superior thermal resistance and high reliability for industrial applications. The technology focuses on minimizing conduction losses while maintaining robust switching performance in small surface-mount packages.

Replacement Considerations

Consult the official datasheet or manufacturer resources for verified substitute part numbers. Do not assume cross-compatibility with other MOSFET families without validating electrical parameters and pin configurations.

FAQ

What is the maximum avalanche energy capability?

The single pulse avalanche energy is rated at 87 mJ when tested with an inductor current of 10 A and a gate resistance of 25 Ω.

Does the device support reverse diode operation?

Yes, the internal body diode supports a continuous forward current of 20 A and a pulsed current of 80 A at 25 °C case temperature.

What is the operating temperature range?

The device is qualified for an operating and storage temperature range from -55 °C to +175 °C.