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BSC074N15NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 114A TSON-8-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC074N15NS5ATMA1
- Description：MOSFET N-CH 150V 114A TSON-8-3
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：114A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4.6V @ 136µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：214W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PG-TSON-8-3
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC074N15NS5ATMA1
Single FETs, MOSFETs Overview
The BSC074N15NS5 is an N-channel OptiMOS 5 power transistor with a 150 V drain-source voltage rating. It features a maximum on-resistance of 7.4 mΩ and supports a continuous drain current of 114 A at 25°C case temperature. The device operates up to 175°C junction temperature and utilizes a TSON-8-3 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Optimized gate charge and on-resistance figure of merit for high-frequency switching
- Very low reverse recovery charge for synchronous rectification applications
- Qualified for industrial applications according to JEDEC standards
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification topologies
- Industrial power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code BSC074N15NS5 against official Infineon documentation to ensure correct package type and revision level. Confirm that the application environment meets the specified thermal and electrical limits defined in the datasheet before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 150 V rating and low conduction losses are required. Consider the TSON-8-3 package dimensions and thermal resistance characteristics relative to the PCB layout constraints. Ensure the gate drive circuitry aligns with the specified threshold and plateau voltages for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 5 family, designed for efficient power management. It represents a silicon-based enhancement mode MOSFET technology optimized for robustness and low switching losses in demanding industrial environments.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Do not assume compatibility based solely on voltage or current ratings; verify pinout, package dimensions, and dynamic parameters.
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