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BSC077N12NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 120V 13.4/98A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC077N12NS3GATMA1
- Description：MOSFET N-CH 120V 13.4/98A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：13.4A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs：88 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5700 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC077N12NS3GATMA1
Single FETs, MOSFETs Overview
The BSC077N12NS3GATMA1 is an OptiMOS™3 N-channel power transistor with a 120 V drain-source voltage rating. It features a maximum on-resistance of 7.7 mΩ and supports a continuous drain current of up to 98 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to 150 °C and utilizes a PG-TDSON-8 package.
Single FETs, MOSFETs Feature Summary
- Optimized gate charge and on-resistance product for high-frequency switching
- Designed specifically for synchronous rectification applications
- Qualified according to JEDEC standards for target automotive applications
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification topologies
- Automotive electronic systems
Single FETs, MOSFETs Procurement Notes
Verify the component matches the exact part number BSC077N12NS3GATMA1, including the ATMA1 tape-and-reel suffix. Confirm that the datasheet revision corresponds to Rev. 2.8 or later to ensure accurate dynamic parameter values. Ensure the supplier provides documentation confirming RoHS compliance and lead-free plating status as specified in the official Infineon data sheet.
Single FETs, MOSFETs Selection Notes
Select this component when low conduction losses are critical due to its optimized RDS(on) value. Consider the PG-TDSON-8 package dimensions for PCB layout constraints. Evaluate thermal management requirements based on the specified thermal resistance values to maintain safe operating temperatures under load conditions.
Single FETs, MOSFETs Part Context
This device belongs to the OptiMOS™3 family of power transistors from Infineon Technologies. It is engineered to provide superior performance in terms of efficiency and switching speed compared to previous generations. The technology focuses on minimizing the figure of merit between gate charge and on-resistance for improved system performance.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference documents for verified substitute part numbers. Do not assume compatibility with other OptiMOS families without verifying pinout and electrical specifications.
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