BSC079N10NSGATMA1

Single FETs, MOSFETs Overview

The BSC079N10NSGATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS™ 2 family, designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 100 V and a typical on-resistance of 7 mΩ at 10 V gate drive. The device supports a continuous drain current of up to 100 A at 25°C and can handle pulsed currents of 400 A. Packaged in the PG-TDSON-8 (SuperSO8) format, it offers low thermal resistance for effective heat dissipation. Key electrical parameters include a gate charge of approximately 42 nC and a threshold voltage range of 2 V to 3.5 V, ensuring reliable operation across industrial temperature ranges.

Single FETs, MOSFETs Feature Summary

• OptiMOS™ 2 technology delivers industry-leading figure-of-merit for efficient power conversion
• Low on-state resistance minimizes conduction losses in high-current applications
• Robust avalanche capability ensures reliability under transient overload conditions
• Lead-free packaging complies with RoHS standards and halogen-free requirements

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Motor control systems and driver circuits
• High-side and low-side switching in power supplies
• Industrial automation and power management modules

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the ATMA1 tape-and-reel suffix against official Infineon documentation to ensure correct packaging configuration. Confirm that the component meets specific automotive or industrial qualification standards if required by your design. Cross-reference the datasheet revision date to ensure compatibility with your schematic symbols and footprint definitions. Always validate thermal performance calculations based on your specific PCB layout and ambient operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a balance between low on-resistance and manageable gate charge is required for 100 V applications. The SuperSO8 package provides a compact solution for space-constrained designs while maintaining adequate current handling capabilities. Consider the thermal resistance characteristics relative to your board's copper area and airflow conditions. Ensure the gate drive voltage aligns with the specified threshold and on-resistance test conditions for optimal performance.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™ 2 portfolio, which utilizes advanced planar trench technology to enhance power density. The BSC079N10NS variant is specifically engineered for general-purpose power switching where efficiency and cost-effectiveness are critical. It serves as a standard solution for replacing older generation MOSFETs in existing designs requiring improved thermal and electrical performance within the 100 V voltage class.

Single FETs, MOSFETs Replacement Considerations

Direct replacements may include other 100 V N-channel MOSFETs in the TDSON-8 package with comparable RDS(on) and ID ratings. Verify pinout compatibility and thermal pad connections before substitution. Check if alternative parts meet the same avalanche energy specifications and gate charge requirements to maintain circuit stability.