BSC080N03LSGATMA1

$1.07

Description：MOSFET N-CH 30V 14A/53A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4db8af0f8230 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC080N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 14A/53A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC080N03LSGATMA1

Description：MOSFET N-CH 30V 14A/53A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-5
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC080N03LSGATMA1

BSC080N03LSGATMA1

Single FETs, MOSFETs Overview

The BSC080N03LSGATMA1 is an N-channel enhancement-mode Power-MOSFET from the OptiMOS™3 series. It features a PG-TDSON-8 surface-mount package with 8 pins. Key electrical parameters include a maximum drain-source voltage of 30 V, a continuous drain current of 53 A at Tc=25°C, and a maximum on-resistance of 8 mΩ at Vgs=10V. The device supports a maximum power dissipation of 35 W at Tc=25°C, operates within a temperature range of -55°C to +150°C, and has a typical total gate charge of 21 nC.

Single FETs, MOSFETs Feature Summary

Logic level operation for direct drive compatibility
Avalanche rated capability for robust transient handling
Optimized technology specifically designed for DC/DC converters
Superior thermal resistance characteristics

Single FETs, MOSFETs Applications

Switching Mode Power Supplies (SMPS)
DC/DC converter circuits
Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance and halogen-free status requirements match project constraints. Ensure the component meets target application qualifications as defined by relevant JEDEC standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for efficient DC/DC conversion. Consider its logic-level threshold for simplified gate drive design. Evaluate the thermal performance based on the specified junction-to-case resistance values relative to the PCB cooling area available in the design.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™3 family of power transistors manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a PG-TDSON-8 package. The product line focuses on providing fast switching capabilities and optimized performance metrics for modern power management applications.