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BSC080P03LSGAUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 16A/30A TDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC080P03LSGAUMA1
- Description：MOSFET P-CH 30V 16A/30A TDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：122.4 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：6140 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-3
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for BSC080P03LSGAUMA1
Single FETs, MOSFETs Overview
The BSC080P03LSGAUMA1 is a single-channel P-Channel enhancement mode MOSFET from Infineon's OptiMOS P series. It features a TDSON-8 surface-mount package with a maximum drain-source voltage of 30 V and a continuous drain current of 16 A at 25°C. The device exhibits a typical on-resistance of 8 mΩ at 10 V gate drive, with a gate charge of 92 nC. It operates within a temperature range of -55°C to +150°C and supports a power dissipation of 2.5 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS P technology provides low on-resistance for high efficiency
- TDSON-8 package enables compact surface-mount integration
- Enhanced thermal performance suitable for demanding environments
Single FETs, MOSFETs Applications
- Low-side switching in automotive systems
- Power management circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix GAUMA1 to ensure correct tape-and-reel packaging and RoHS compliance status. Confirm that the TDSON-8 footprint matches your PCB design requirements. Check for any specific moisture sensitivity level handling instructions prior to assembly.
Single FETs, MOSFETs Selection Notes
Select this component when a 30 V P-Channel MOSFET with low on-resistance is required in a compact TDSON-8 package. Consider the 16 A continuous current rating and 8 mΩ on-resistance for load requirements. Ensure the operating temperature range meets system specifications.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS P family, designed for efficient power switching. The TDSON-8 package offers improved thermal characteristics compared to traditional SO-8 packages. It is engineered for robust performance in automotive and industrial applications requiring reliable P-channel switching.
Single FETs, MOSFETs Replacement Considerations
Direct replacements may include other OptiMOS P devices with similar electrical characteristics and package dimensions. Verify pin compatibility and thermal resistance values before substitution.
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