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BSC084P03NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 14.9A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC084P03NS3GATMA1
- Description：MOSFET P-CH 30V 14.9A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：14.9A (Ta), 78.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.1V @ 105µA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4785 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC084P03NS3GATMA1
Single FETs, MOSFETs Overview
The BSC084P03NS3GATMA1 is a single-channel P-Channel enhancement mode MOSFET from Infineon's OptiMOS P3 series. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of -30 V, a continuous drain current (Id) of 78.6 A, and a maximum gate-source voltage (Vgs) of ±25 V. The device exhibits a low on-resistance (Rds(on)) of 6.1 mΩ at 10 V gate drive, with a typical gate charge (Qg) of 57.7 nC. It supports a power dissipation (Pd) of 69 W and operates within a junction temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- OptiMOS P3 technology delivers low on-resistance for high efficiency in power switching applications.
- High current capability supports demanding load switching and power path management tasks.
- Robust thermal performance enables reliable operation under high power dissipation conditions.
Single FETs, MOSFETs Applications
- High-performance notebook battery management systems
- Load switches for motherboard power distribution
- High-side switches in synchronous DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix GATMA1 to ensure correct packaging and tape-and-reel configuration. Confirm that the specific revision matches the design requirements for automotive or industrial qualification if applicable. Cross-reference the datasheet version to validate parameter tolerances before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a P-Channel MOSFET with high current handling and low on-resistance is required. The TDSON-8 package offers a compact footprint suitable for space-constrained designs. Ensure the gate drive voltage aligns with the specified 10 V test condition for optimal Rds(on) performance. Consider the thermal resistance characteristics for adequate heat sinking in high-power scenarios.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's OptiMOS P3 family, designed for general-purpose power switching. It complements N-Channel counterparts like the IAUCN04S7N020ATMA1 in complementary bridge configurations. The product line emphasizes reliability and efficiency for consumer electronics and industrial control applications requiring robust P-Channel solutions.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Alternative models may require evaluation of pin compatibility, thermal characteristics, and electrical parameter margins against the original specifications.
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