BSC0911NDATMA1

Overview

The BSC0911NDATMA1 is a dual N-channel OptiMOS™ MOSFET in a PG-TISON-8 package. It features a drain-source voltage of 25 V and logic-level gate drive rated at 4.5 V. Continuous drain current reaches 40 A at Tc=70°C (Vgs=10 V) or 30 A at Ta=25°C (Vgs=4.5 V). Maximum on-resistance is 3.2 mΩ at Vgs=10 V and 4.8 mΩ at Vgs=4.5 V for Q1. Total gate charge is up to 12 nC for Q1 and 37 nC for Q2. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration optimized for high-performance Buck converter applications
• Logic-level gate drive capability rated for 4.5 V operation
• JEDEC qualified for target applications with Pb-free, RoHS compliant, and halogen-free construction

Applications

• High performance Buck converters
• DC-DC power conversion circuits

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the component matches the PG-TISON-8 package outline and marking code 0911ND. Confirm compliance with IEC61249-2-21 halogen-free standards and JEDEC qualification requirements prior to integration.

Selection Notes

Select this component for low-voltage synchronous rectification where logic-level control is required. The dual channel design supports efficient half-bridge or buck topologies. Evaluate thermal resistance values relative to the PCB copper area and ambient conditions to ensure junction temperatures remain within the specified -55 °C to +150 °C operating range during continuous operation.

Part Context

This device belongs to the OptiMOS™ family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology to provide enhanced switching performance and low conduction losses. The PG-TISON-8 package offers a compact footprint suitable for surface-mount assembly on printed circuit boards.

Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in the PG-TISON-8 package that meet the 25 V rating and logic-level drive requirements. Verify pinout compatibility and thermal characteristics before substitution.

FAQ

What is the maximum continuous drain current for the BSC0911ND?

The maximum continuous drain current is 40 A when the case temperature is 70 °C and Vgs is 10 V. At an ambient temperature of 25 °C with Vgs at 4.5 V, it is 30 A.

Is the BSC0911ND suitable for logic-level driving?

Yes, the device is explicitly rated as a logic-level MOSFET with a gate threshold voltage tested at Vgs=4.5 V.

What is the avalanche energy rating for single pulses?

The single pulse avalanche energy is 20 mJ for Q1 and 160 mJ for Q2, measured at Id=20 A with Rgs=25 Ω.