BSC0921NDIATMA1

Overview

The BSC0921NDIATMA1 is a dual N-channel OptiMOS™ MOSFET in a PG-TISON-8 package. It features two independent N-channel devices optimized for high-performance buck converters. Key electrical parameters include a drain-source breakdown voltage of 30 V and logic-level gate threshold voltages ranging from 1.2 V to 2 V. The device supports continuous drain currents up to 40 A at Tc=70°C and pulsed currents up to 160 A. On-state resistance (RDS(on)) is rated at a maximum of 5 mΩ at VGS=10V for Q1, and 1.6 mΩ for Q2. Total power dissipation reaches 2.5 W at Ta=25°C.

Feature Summary

• Optimized for high-performance synchronous buck converter applications
• Logic level operation with low gate threshold voltage for efficient drive
• Integrated monolithic Schottky-like diodes for improved reverse recovery
• Asymmetrical design allowing distinct performance characteristics for each channel

Applications

• High-performance DC-DC buck converters
• Synchronous rectification circuits
• Low voltage power switching applications

Procurement Notes

Verify the component authenticity by checking the marking code on the package against official Infineon documentation. Ensure the ordering suffix ATMA1 corresponds to the required tape and reel packaging configuration. Confirm that the specific revision matches the datasheet version required for your design specifications.

Selection Notes

Select this component when asymmetrical current handling or distinct RDS(on) values are required within a single package. The logic level rating allows direct driving from standard logic controllers without additional gate drivers. Consider the thermal resistance limits and PCB copper area requirements to ensure safe operating temperatures under load.

Part Context

This part belongs to the Dual N-Channel OptiMOS™ family, designed specifically for power block applications. It integrates two N-channel MOSFETs into a compact PG-TISON-8 package, offering a space-saving solution compared to discrete components while maintaining high current capabilities and low on-resistance.

Replacement Considerations

Direct replacements must match the PG-TISON-8 package, 30 V rating, and similar current capabilities. Verify pinout compatibility and thermal characteristics. Check if alternative parts offer comparable RDS(on) and gate charge specifications to maintain circuit efficiency.

FAQ

What is the difference between Q1 and Q2 in the BSC0921NDI?

Q1 and Q2 have different on-state resistance ratings and current capabilities. Q2 typically exhibits lower RDS(on) and higher continuous current capacity compared to Q1, making them suitable for asymmetric roles in a half-bridge or buck converter.

Is the BSC0921NDI qualified for automotive applications?

The datasheet states it is qualified according to JEDEC standards for target applications. However, specific automotive qualification (such as AEC-Q101) should be confirmed with Infineon technical support or detailed product reports, as general industrial qualification does not automatically imply automotive grade.

What type of internal diode is integrated in this MOSFET?

The device includes an integrated monolithic Schottky-like diode. This provides faster reverse recovery characteristics compared to a standard body diode, reducing switching losses in synchronous rectification applications.