BSC0924NDIATMA1

Overview

The BSC0924NDI is a dual N-channel OptiMOS™ MOSFET in PG-TISON-8 packaging. It features an integrated monolithic Schottky-like diode and logic level operation rated at 4.5V. Maximum ratings include a drain-source voltage of 30V, continuous drain current up to 40A (TC=70°C), and pulsed drain current of 160A. On-state resistance ranges from 3.7mΩ to 7.0mΩ depending on the channel and gate drive. The device is 100% avalanche tested and qualified according to JEDEC standards.

Feature Summary

• Dual N-channel configuration with integrated monolithic Schottky-like diode
• Optimized for high-performance Buck converter applications
• Logic level operation rated at 4.5V
• 100% avalanche tested and JEDEC qualified

Applications

• High performance Buck converters
• Power management circuits requiring logic level switching
• Applications utilizing integrated synchronous rectification

Procurement Notes

Verify the specific ordering suffix ATMA1 corresponds to the required tape and reel packaging format. Confirm that the PG-TISON-8 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-case and junction-to-ambient thermal resistances under your operating conditions.

Selection Notes

Select this component when a compact dual N-channel solution with integrated body diode characteristics is needed for low-voltage power conversion. The logic level rating supports direct drive from standard logic controllers. Consider the thermal performance limits and avalanche energy capabilities for robust designs in demanding environments.

Part Context

This part belongs to Infineon's OptiMOS™ family of power MOSFETs, designed for efficient power switching. The PG-TISON-8 package provides a small footprint suitable for space-constrained designs while offering adequate thermal dissipation for automotive and industrial applications.

Replacement Considerations

Check datasheets for other Dual N-Channel OptiMOS™ devices in the PG-TISON-8 package with compatible VDS and RDS(on) specifications. Verify pinout compatibility and thermal resistance values before substitution.

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 40A when the case temperature is maintained at 70°C with a gate-source voltage of 10V.

Is the device suitable for logic level driving?

Yes, the BSC0924NDI is optimized for logic level operation and is rated at 4.5V gate-source voltage.

Does this MOSFET have an integrated diode?

Yes, it includes an integrated monolithic Schottky-like diode for each channel.