BSC0925NDATMA1

Overview

The BSC0925ND is a dual N-channel OptiMOS power MOSFET in PG-TISON-8 packaging. It features a maximum drain-source voltage of 30 V and continuous drain current of 40 A at Tc=25°C. The on-state resistance (RDS(on)) is 5 mΩ max at VGS=10V and 7 mΩ max at VGS=4.5V. Total gate charge is 13 nC typical at VGS=0 to 10V. Power dissipation reaches 30 W at Tc=25°C, with thermal resistance RthJC of 4.2 K/W.

Feature Summary

• Dual N-channel configuration optimized for high-performance buck converter applications
• Clean switching characteristics with superior thermal resistance
• 100% avalanche tested for enhanced reliability

Applications

• High performance Buck converters
• Synchronous rectification circuits

Procurement Notes

Verify the component against the official Infineon datasheet revision 2.0. Confirm the package marking '0925ND' matches the physical device. Ensure the ordering suffix ATMA1 corresponds to the required tape-and-reel packaging format specified by the manufacturer.

Selection Notes

Select this component for low-voltage synchronous rectification where clean switching and high efficiency are critical. The dual channel design allows for compact implementation in buck topologies. Evaluate thermal management requirements based on the specific PCB copper area and ambient conditions.

Part Context

This part belongs to the OptiMOS™ family of power MOSFETs from Infineon Technologies. It utilizes the PG-TISON-8 package, which provides robust mechanical stability and efficient heat dissipation capabilities suitable for surface-mount assembly in power electronics designs.

Replacement Considerations

Check for direct replacements within the same OptiMOS series or equivalent packages. Verify that any substitute maintains the 30 V rating, 40 A current capacity, and compatible pinout configuration.