ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC093N15NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 87A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC093N15NS5ATMA1
- Description：MOSFET N-CH 150V 87A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：9.3mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id：4.6V @ 107µA
- Gate Charge (Qg) (Max) @ Vgs：40.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3230 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC093N15NS5ATMA1
Single FETs, MOSFETs Overview
The BSC093N15NS5ATMA1 is an N-channel OptiMOS 5 power transistor with a 150 V drain-source voltage rating. It features a maximum continuous drain current of 87 A at 25 °C case temperature and a typical on-resistance of 9.3 mΩ. The device operates within a junction temperature range of -55 °C to 150 °C, dissipating up to 139 W. Key electrical parameters include a gate charge of 33 nC and a reverse recovery charge of 58 nC.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency switching and synchronous rectification applications
- Features excellent gate charge multiplied by on-resistance figure of merit
- Provides very low on-resistance and reverse recovery charge characteristics
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification modules
- Power conversion systems requiring low conduction losses
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure that the requested component matches the exact part number variant required for your design implementation. Cross-reference datasheet revision history to validate parameter consistency before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring robust 150 V blocking capability combined with high current handling. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Confirm that the operating frequency aligns with the device's dynamic characteristics and gate charge profile for optimal efficiency.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS 5 family of power transistors manufactured by Infineon Technologies. It utilizes PG-TDSON-8 surface-mount packaging to facilitate efficient heat dissipation and compact board integration. The technology focuses on minimizing switching losses while maintaining high reliability in demanding power electronics environments.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides or contact technical support directly for verified replacement options. Do not assume functional equivalence with other MOSFETs without validating pinout compatibility and electrical parameter limits.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
