ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 17A TISON8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：17A (Ta)
- Rds On (Max) @ Id, Vgs：5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PG-TISON-8
- Grade：-
- Qualification：-
Download product information
Overview
The BSC0993NDATMA1 is a dual N-channel OptiMOS Power-MOSFET from Infineon Technologies, designed for 30 V applications. It features a PG-TISON-8 surface-mount package with a maximum continuous drain current of 17 A and a pulsed drain current of 68 A at 25 °C. The device exhibits a maximum on-state resistance of 5 mΩ at VGS=10 V. Key dynamic parameters include a total gate charge of 13 nC (at VGS=10 V) and an output charge of 8.6 nC. It operates within a junction temperature range of -55 °C to 150 °C and offers superior thermal resistance.
Feature Summary
- Dual N-channel configuration optimized for clean switching performance
- Superior thermal resistance characteristics for efficient heat dissipation
- 100% avalanche tested for enhanced reliability under stress conditions
- Qualified according to JEDEC standards for target wireless charger applications
Applications
- Wireless chargers
- DC-DC converters
- Synchronous rectification circuits
Procurement Notes
Verify the component against the official Infineon datasheet Rev. 2.0 to confirm electrical specifications and package dimensions. Ensure the ordering code matches the required tape-and-reel packaging format. Cross-reference the marking code '0993ND' on the physical device to authenticate the manufacturer and part identity before integration into production systems.
Selection Notes
Select this component for low-voltage synchronous rectification where high efficiency and compact footprint are critical. The dual-channel design allows for space-saving implementations in power stages. Evaluate the thermal requirements against the specified RthJA of 50 K/W on a standard PCB to ensure adequate cooling without additional heatsinking solutions.
Part Context
This part belongs to the OptiMOS Power-MOSFET family, specifically engineered for low-voltage power conversion. It utilizes Infineon's proprietary trench technology to minimize conduction losses while maintaining fast switching speeds. The PG-TISON-8 package provides a robust mechanical solution for surface-mount assembly in consumer electronics and industrial power supplies.
Replacement Considerations
Consult the official Infineon replacement guide or contact technical support for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal characteristics.
