BSC100N03LSGATMA1

$0.65

Description：MOSFET N-CH 30V 13A/44A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d136cbfc410e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC100N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 13A/44A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC100N03LSGATMA1

Description：MOSFET N-CH 30V 13A/44A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC100N03LSGATMA1

BSC100N03LSGATMA1

Single FETs, MOSFETs Overview

The BSC100N03LSGATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 series. It features a 30 V drain-source voltage rating and a continuous drain current of 100 A. The device exhibits a maximum on-resistance of 4.7 mΩ at 10 V gate drive. Packaged in a surface-mount TDSON-8 configuration, it supports operation between -55 °C and +150 °C with a power dissipation capacity of 69 W.

Single FETs, MOSFETs Feature Summary

Utilizes OptiMOS 3 technology for optimized switching performance
Provides high current handling capability within a compact footprint
Features low on-resistance to minimize conduction losses

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control applications
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference thermal resistance values against specific PCB layout designs to validate heat dissipation requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency at low voltage levels. Evaluate the trade-off between the low on-resistance and gate charge characteristics for switching frequency optimization. Ensure the driving circuit can supply sufficient gate voltage to achieve the specified 4.7 mΩ threshold.

Single FETs, MOSFETs Part Context

This part belongs to the BSC100N03LS family of silicon-based N-channel MOSFETs. It shares the OptiMOS 3 platform architecture with other variants in the series, differing primarily in package type and specific electrical ratings such as current capacity and on-state resistance.