BSC118N10NSGATMA1

Single FETs, MOSFETs Overview

The BSC118N10NSGATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 2 family, housed in a PG-TDSON-8 package. It features a drain-source breakdown voltage of 100 V and a maximum continuous drain current of 71 A at 25 °C case temperature. The device exhibits a typical on-resistance of 10 mΩ with a maximum of 11.8 mΩ at VGS=10 V. Key electrical parameters include a total gate charge of 56 nC, a forward transconductance of up to 65 S, and a pulsed drain current capability of 280 A. It supports junction temperatures up to 150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching and synchronous rectification applications
• Features excellent gate charge and on-resistance product (FOM)
• Designed with very low on-resistance for efficient power handling
• Qualified according to JEDEC standards for target automotive and industrial applications

Single FETs, MOSFETs Applications

• High-frequency switching circuits
• Synchronous rectification modules
• Automotive power distribution systems
• Industrial motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Confirm that the PG-TDSON-8 footprint matches your PCB design constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a low RDS(on) value is critical for minimizing conduction losses in high-current applications. The OptiMOS 2 technology provides a superior figure of merit compared to standard MOSFETs. Consider the thermal resistance characteristics and ensure adequate cooling solutions are implemented to maintain the junction temperature within the specified operating range during peak load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 2 series, which utilizes advanced silicon technology to achieve lower on-resistance and faster switching speeds. The PG-TDSON-8 package offers a compact form factor suitable for surface-mount assembly, providing efficient thermal dissipation through the exposed pad. It serves as a robust solution for modern power electronics requiring high efficiency and reliability.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified replacements. Ensure any substitute maintains identical pinout configuration, voltage ratings, and thermal performance characteristics to guarantee circuit compatibility without redesigning the layout or driver components.