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BSC13DN30NSFDATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 300V 16A TDSON-8-1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC13DN30NSFDATMA1
- Description：MOSFET N-CH 300V 16A TDSON-8-1
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2450 pF @ 150 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC13DN30NSFDATMA1
Single FETs, MOSFETs Overview
The BSC13DN30NSFDATMA1 is an N-channel OptiMOS™ 3 power transistor rated for 300 V drain-source voltage. It features a maximum on-resistance of 130 mΩ at 16 A and supports a continuous drain current of 16 A with a pulsed capability of 64 A. The device operates within a junction temperature range of -55 °C to 175 °C and utilizes a PG-TDSON-8 package.
Single FETs, MOSFETs Feature Summary
- Optimized gate charge and on-resistance product for high-frequency switching efficiency
- Qualified according to JEDEC standards for target applications
- Halogen-free construction compliant with IEC61249-2-21
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification systems
- Power conversion topologies requiring low conduction losses
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized distribution channels and validate datasheet revision alignment prior to integration into production designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications demanding robust 300 V blocking capability combined with low thermal resistance. Evaluate the trade-off between the 130 mΩ on-resistance and total gate charge to optimize switching performance in synchronous rectifier configurations.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 3 family, designed for general-purpose power switching. It provides enhanced performance over previous generations through improved FOM metrics while maintaining compatibility with standard surface-mount assembly processes using the compact PG-TDSON-8 footprint.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Direct replacements must match the 300 V rating, 16 A current capacity, and PG-TDSON-8 package dimensions to ensure mechanical and electrical compatibility.
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