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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 20A 8TDSON
- Series：OptiMOS™ T2
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Rds On (Max) @ Id, Vgs：15.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2250pF @ 30V
- Power - Max：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PG-TDSON-8-4
- Grade：-
- Qualification：-
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Overview
The BSC155N06NDATMA1 is a dual N-channel Power MOSFET from Infineon Technologies, housed in a TDSON-8 surface-mount package. It features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 20 A. The device exhibits a maximum on-resistance (Rds(on)) of 15.5 mΩ at 10 V gate drive. Gate-source voltage limits are ±20 V, with a typical threshold voltage of 2 V and total gate charge of 29 nC. It supports an operating temperature range from -55 °C to +175 °C and offers a power dissipation capability of 50 W.
Feature Summary
- Dual configuration integrating two independent N-channel transistors within a single compact package for space-constrained designs.
- Optimized low on-resistance characteristics to minimize conduction losses and improve overall system efficiency.
- Enhanced thermal performance allowing reliable operation at junction temperatures up to 175 °C.
Applications
- Battery-powered wheel drive systems
- Sensorless Field-Oriented Control (FOC) motor drives
- Robotics actuation circuits
Procurement Notes
Verify the complete part number including the suffix ATMA1 to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference datasheet revision levels to validate electrical parameters against specific design requirements.
Selection Notes
Select this component for applications requiring dual-channel control in a minimal footprint. The 60 V rating suits low-voltage DC systems. Evaluate thermal management needs as the 50 W dissipation rating depends heavily on PCB copper area and ambient conditions. Ensure gate drive voltages remain within the specified ±20 V limits.
Part Context
This component belongs to the BSC155N06 series of dual MOSFETs. It is distinct from single-channel variants like the BSC012N06NSATMA1 or higher voltage devices such as the ISC055N15NM6ATMA1. The TDSON-8 package provides a balance between thermal conductivity and board space efficiency compared to larger packages.
Replacement Considerations
Direct substitutes include other Infineon dual N-channel MOSFETs in TDSON-8 with compatible 60 V ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and Id before substitution.
