BSC190N15NS3GATMA1

Single FETs, MOSFETs Overview

The BSC190N15NS3GATMA1 is a N-channel Power MOSFET from Infineon's OptiMOS 3 technology family, designed for high-efficiency power switching applications. It features a low on-state resistance of 190 milliohms at 10 volts gate-source voltage and a maximum drain-source voltage rating of 150 volts. The device utilizes a PG-TO263-3 package with thermal enhancement capabilities, supporting continuous drain currents up to 84 amperes. This component integrates robust avalanche characteristics and fast switching speeds, making it suitable for synchronous rectification in DC-DC converters and motor control systems.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides optimized trade-off between conduction losses and switching performance
• Enhanced thermal design facilitates efficient heat dissipation through the exposed pad
• Highly rugged construction ensures reliable operation under transient overload conditions

Single FETs, MOSFETs Applications

• Synchronous rectification in point-of-load DC-DC converters
• Motor drive circuits and brushless DC motor controllers
• High-frequency power supply stages requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes such as 'ATMA1' to ensure correct tape-and-reel packaging configuration. Confirm that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Check for specific marking codes on the component surface to match datasheet specifications exactly before integration into production lines.

Single FETs, MOSFETs Selection Notes

Select this component when application requirements demand low RDS(on) combined with high voltage tolerance in a compact footprint. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance values. Ensure gate drive voltages remain within the recommended operating range to maintain optimal switching efficiency and prevent gate oxide degradation during high-frequency operation cycles.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's broad portfolio of automotive-grade and industrial power semiconductors. The OptiMOS 3 generation represents a mature platform balancing cost-effectiveness with performance enhancements over previous iterations. Its inclusion in standard TO-263 packages allows compatibility with existing PCB layouts designed for similar voltage classes, facilitating straightforward upgrades in established power electronics designs without significant re-engineering efforts.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 150V voltage class and comparable RDS(on) specifications. Verify pinout compatibility with the PG-TO263-3 package to ensure mechanical interchangeability. Consider thermal resistance differences if substituting with devices from other manufacturers to maintain equivalent junction temperature limits under identical load conditions.