ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC520N15NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 21A TDSON-8-5. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC520N15NS3GATMA1
- Description：MOSFET N-CH 150V 21A TDSON-8-5
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：52mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：890 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：57W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC520N15NS3GATMA1
Single FETs, MOSFETs Overview
The BSC520N15NS3GATMA1 is an N-channel OptiMOS 3 power transistor with a 150 V drain-source breakdown voltage and a maximum on-resistance of 52 mΩ. It supports a continuous drain current of 21 A at 25°C case temperature and handles pulsed currents up to 84 A. The device operates within a junction temperature range of -55°C to 150°C, dissipating up to 57 W. Key dynamic parameters include a total gate charge of 8.7 nC typical, turn-on delay of 7 ns, and fall time of 3 ns. It utilizes the PG-TDSON-8 package.
Single FETs, MOSFETs Feature Summary
- Optimized for DC-DC conversion applications
- Features excellent gate charge x RDS(on) figure of merit
- Very low on-resistance characteristics
- Qualified according to JEDEC standards
Single FETs, MOSFETs Applications
- DC-DC conversion circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance and halogen-free status requirements match project constraints. Cross-reference thermal resistance values with actual PCB copper area dimensions to validate thermal management designs before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing systems requiring a 150 V rating with high efficiency in compact surface-mount packages. Evaluate the 52 mΩ on-resistance against load current requirements to manage conduction losses. Consider the 8.7 nC gate charge for driver capability matching in switching frequency applications. Ensure the operating environment stays within the specified -55°C to 150°C junction temperature limits.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS 3 family, designed for general-purpose power switching. It is housed in a PG-TDSON-8 (SuperSO8) package, providing a balance between thermal performance and footprint size. The technology focuses on minimizing the figure of merit for improved efficiency in power supply designs compared to previous generations.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Direct replacements must maintain identical pinout, voltage ratings, and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
