BSC882N03MSG

$0.54

Description：N-CHANNEL POWER MOSFET
Series：OptiMOS™ 3
Mfr：Infineon Technologies
Package：Bulk

SKU:be1a8f2fb8a9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC882N03MSG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC882N03MSG

Description：N-CHANNEL POWER MOSFET
Series：OptiMOS™ 3
Mfr：Infineon Technologies
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：34 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4300 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC882N03MSG

BSC882N03MSG

Single FETs, MOSFETs Overview

The BSC882N03MSG is an N-Channel Power-MOSFET from Infineon Technologies, part of the OptiMOS 3M series. It features a 34 V drain-source voltage rating and supports a continuous drain current of 100 A at case temperature or 22 A at ambient temperature. The device utilizes a PG-TSDSON-8 surface mount package with a power dissipation capacity of 69 W at case temperature. Constructed using silicon technology, it operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for low on-resistance performance in high-current applications
Designed for efficient switching with enhanced thermal stability
Suitable for 5V driver applications including notebook and VGA power supplies

Single FETs, MOSFETs Applications

Notebook power management systems
VGA power supply circuits
Point-of-load (POL) conversion

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon distributors. Confirm RoHS compliance status via official documentation. Ensure storage conditions maintain integrity prior to assembly. Check for specific marking codes to distinguish variants. Validate package type matches design requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust N-Channel switching with high current handling capabilities. Consider the TDSON-8 package for space-constrained PCB layouts. Evaluate thermal management needs given the 69 W case dissipation rating. Ensure gate drive voltage compatibility with the specified threshold characteristics for optimal efficiency.

Single FETs, MOSFETs Part Context

This MOSFET belongs to the OptiMOS 3M family, engineered for improved efficiency in low-voltage power switching. The series targets portable electronics and industrial control where size and thermal performance are critical. It represents Infineon's silicon-based solution for balancing conduction losses with switching speed in compact form factors.