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BSC889N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 12A 44A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC889N03MSGATMA1
- Description：MOSFET N-CH 30V 12A 44A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta) 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 28W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC889N03MSGATMA1
Single FETs, MOSFETs Overview
The BSC889N03MSGATMA1 is an N-channel enhancement-mode power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 30V drain-source voltage rating and supports a continuous drain current of 100A. The device offers a low on-resistance of 2.5mΩ at room temperature. Packaged in a PG-TDSON-8 (3.3x3.3mm) surface-mount format, it is designed for high-efficiency switching applications with a maximum power dissipation of 28W at case temperature.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology provides superior performance compared to previous generations
- Low on-resistance enables high efficiency in power switching
- Robust package design suitable for surface mount applications
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Power management circuits
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and revision level against the official datasheet to ensure compatibility with your design requirements. Confirm that the component meets all relevant RoHS and REACH compliance standards required for your target market. Check for any obsolescence notices or recommended new design alternatives provided by the manufacturer before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a 30V N-channel MOSFET with high current capability is required. Ensure the thermal management solution can handle the specified power dissipation limits. Compare gate charge and switching times against system speed requirements to optimize drive circuitry design.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family of power transistors, engineered for robust performance in demanding power electronics environments. It represents an advancement over earlier iterations, offering improved efficiency and reliability for modern electronic designs requiring compact, high-performance switching solutions.
Single FETs, MOSFETs Replacement Considerations
Consult the official Infineon replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical parameters, and thermal characteristics.
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