BSD214SNH6327XTSA1

Single FETs, MOSFETs Overview

The BSD214SNH6327XTSA1 is an N-channel enhancement mode small-signal MOSFET from the OptiMOS™2 series, manufactured by Infineon Technologies. It features a PG-SOT-363 package and is rated for a continuous drain current of 1.5 A at 25°C. The device supports a drain-source breakdown voltage of 20 V and includes avalanche rating capabilities. Key electrical parameters include a maximum on-state resistance of 250 mΩ at VGS=2.5 V and 140 mΩ at VGS=4.5 V. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Super Logic level operation optimized for 2.5V gate drive applications
• Avalanche rated for robustness against inductive load switching events
• Qualified according to AEC-Q101 automotive standards
• Lead-free, RoHS compliant, and halogen-free construction

Single FETs, MOSFETs Applications

• Automotive electronic systems requiring AEC-Q101 qualified components
• Low-voltage logic level switching circuits
• Power management modules with inductive loads

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 matches the required tape and reel quantity of 3000 pieces per reel. Confirm that the PG-SOT-363 package variant aligns with the PCB footprint design. Ensure the component meets the specified RoHS and halogen-free requirements for the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with low gate threshold voltage is needed for 2.5V logic interfaces. The 20V breakdown voltage suits low-voltage DC-DC converters or battery protection circuits. Consider the thermal resistance of 250 K/W on a minimal footprint when designing heat dissipation strategies.

Single FETs, MOSFETs Part Context

This part belongs to the BSD214SN family of OptiMOS™2 small-signal transistors. It is designed as a high-performance alternative to standard MOSFETs, offering improved switching characteristics and lower on-resistance. The SOT-363 package provides a compact solution for space-constrained designs while maintaining reliable performance in automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the N-channel configuration, 20V VDS rating, and PG-SOT-363 package. Verify that any replacement also holds AEC-Q101 qualification if used in automotive applications. Check that the replacement's RDS(on) and gate charge parameters are compatible with the existing driver circuitry.