BSD223P L6327

Overview

The BSD223P L6327 is a dual P-Channel OptiMOS small-signal transistor in a PG-SOT-363 package. It features a drain-source breakdown voltage of -20 V and continuous drain currents of -0.39 A at 25°C and -0.31 A at 70°C. The device exhibits low on-state resistance, typically 1.2 Ω at VGS=-4.5V and 1.27 Ω at VGS=-2.5V. It supports an operating temperature range from -55°C to +150°C and includes avalanche and dv/dt ratings.

Feature Summary

• Dual P-Channel configuration with enhancement mode operation
• Super Logic Level capability rated for 2.5 V gate drive
• Avalanche energy rated for robust switching performance
• High dv/dt rating suitable for fast transient applications

Applications

• Low-side switching in automotive electronics
• Power management circuits requiring logic-level control
• Motor driver interfaces
• Load switch applications

Procurement Notes

Verify the specific ordering suffix H6327 for tape and reel packaging containing 3000 pieces per reel. Confirm RoHS compliance and halogen-free status according to IEC61249-2-21 standards. Ensure the component meets AEC-Q101 qualification requirements if used in automotive contexts. Check datasheet revision history for any updates to electrical characteristics or thermal parameters before finalizing design specifications.

Selection Notes

Select this component for designs requiring dual P-Channel MOSFETs in a compact SOT-363 footprint. The Super Logic Level feature allows direct interfacing with 2.5 V logic sources, reducing gate drive complexity. Consider the thermal resistance values when calculating power dissipation limits at elevated ambient temperatures. Verify that the pulsed drain current capabilities align with the peak load requirements of the target application circuit.

Part Context

This part belongs to Infineon's OptiMOS family of small-signal transistors. It utilizes silicon technology optimized for low on-resistance and fast switching speeds. The PG-SOT-363 package provides a compact solution for space-constrained printed circuit board layouts while maintaining adequate thermal performance for small-signal applications.

Replacement Considerations

Check for compatible dual P-Channel MOSFETs in the SOT-363 package with similar -20 V breakdown voltage and low RDS(on) characteristics. Verify pinout compatibility and thermal resistance values to ensure equivalent performance in existing footprints.

FAQ

What is the maximum avalanche energy rating?

The single pulse avalanche energy rating is 1.4 mJ under conditions of ID=-0.39 A, VDD=-10 V, and RGS=25 Ω.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage typically decreases as junction temperature increases, ranging from approximately -0.9 V at room temperature to lower negative values at higher temperatures.

Is this component qualified for automotive applications?

Yes, the BSD223P is qualified according to the AEC-Q101 standard for automotive electronic components.