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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.39A SOT363
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：390mA
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 390mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 1.5µA
- Gate Charge (Qg) (Max) @ Vgs：0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：56pF @ 15V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
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Overview
The BSD223P is a dual P-Channel enhancement mode MOSFET from Infineon's OptiMOS series, housed in a PG-SOT-363 package. It features a drain-source voltage of -20 V and a continuous drain current of -0.39 A at 25°C. The device exhibits a low on-state resistance of 1.2 Ω at VGS = -4.5 V and operates within a temperature range of -55°C to +150°C. Qualified under AEC-Q101 standards, it supports super logic level operation rated for 2.5 V gate drive.
Feature Summary
- Dual P-Channel configuration with independent channel control
- Super Logic Level capability for efficient 2.5 V gate drive
- Avalanche energy rated for robust transient handling
- High dv/dt rating for fast switching applications
Applications
- Low-side switching in automotive electronics
- Load management in battery-powered devices
- General-purpose signal switching circuits
Procurement Notes
Verify the specific ordering suffix (e.g., H6327) against official Infineon documentation to confirm packaging details such as tape and reel quantities. Ensure component authenticity through authorized distribution channels and validate compliance with RoHS and halogen-free requirements prior to integration.
Selection Notes
Select this component for designs requiring compact dual P-Channel solutions with high switching speeds. Consider the thermal resistance characteristics when determining heat dissipation needs. Verify that the required gate drive voltage aligns with the specified super logic level thresholds for optimal performance.
Part Context
This part belongs to the OptiMOS small-signal transistor family, designed for efficiency and reliability in space-constrained applications. The PG-SOT-363 package provides a compact footprint suitable for surface-mount assembly, supporting automated manufacturing processes while maintaining electrical performance.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the dual P-Channel topology, voltage ratings, and package dimensions to maintain circuit integrity without redesign.
FAQ
What is the maximum avalanche energy rating?
The single pulse avalanche energy is rated at 1.4 mJ under conditions of ID = -0.39 A, VDD = -10 V, and RGS = 25 Ω.
Is the device qualified for automotive applications?
Yes, the BSD223P is qualified according to the AEC-Q101 standard for automotive electronic components.
What is the reverse diode forward recovery time?
The reverse recovery time (trr) is typically 7.6 ns and has a maximum rating of 9.5 ns under specified test conditions.
