BSD235NH6327XTSA1

BSD235NH6327XTSA1

$0.36
  • Description:MOSFET 2N-CH 20V 0.95A SOT363
  • Series:OptiMOS™ 2

SKU:95def9d72713 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.95A SOT363
  • Series:OptiMOS™ 2
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:950mA
  • Rds On (Max) @ Id, Vgs:350mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs:0.32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:63pF @ 10V
  • Power - Max:500mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Grade:Automotive
  • Qualification:AEC-Q101

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BSD235NH6327XTSA1

Overview

The BSD235NH6327XTSA1 is a dual N-channel OptiMOS™2 small-signal transistor in a PG-SOT-363 package. It features a 20 V drain-source breakdown voltage and a continuous drain current of 0.95 A at 25 °C. The device supports super logic level operation with a gate threshold voltage ranging from 0.7 V to 1.2 V, enabling efficient switching at low voltages. It includes avalanche rating capabilities and meets AEC-Q101 automotive qualification standards.

Feature Summary

  • Dual N-channel configuration for compact circuit integration
  • Super Logic level operation rated for 2.5 V drive
  • Avalanche energy rated for robust transient handling
  • Automotive qualified according to AEC-Q101

Applications

  • Mobile robot battery management systems
  • Low-side switching applications
  • Logic level translation circuits

Procurement Notes

Verify the complete part number including the H6327 suffix to ensure correct packaging specifications. Confirm that the component meets RoHS compliance requirements for your specific manufacturing process. Check the datasheet revision date to ensure alignment with your design documentation. Ensure storage conditions adhere to the specified climatic category limits.

Selection Notes

Select this component when a dual N-channel MOSFET with low gate charge and high switching speed is required. The 2.5 V logic level capability makes it suitable for microcontroller-driven applications. Consider the thermal resistance characteristics for PCB layout optimization. Verify that the pulsed drain current ratings align with the expected load transients in the target application.

Part Context

This component belongs to the BSD235 series of OptiMOS™2 small-signal transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching applications requiring high efficiency and reliability. The PG-SOT-363 package provides a compact footprint suitable for space-constrained designs.

Replacement Considerations

Direct substitutes include BSD235CH6327XTSA1 for mixed polarity configurations. Verify pinout compatibility and electrical parameter overlaps before substitution. Consult official replacement guides for cross-reference information.

FAQ

What is the maximum avalanche energy rating?

The single pulse avalanche energy rating is 1.6 mJ under specified test conditions.

Is the device suitable for automotive applications?

Yes, the component is qualified according to the AEC-Q101 standard for automotive use.

What is the typical turn-on delay time?

The typical turn-on delay time is 3.8 ns.

BSD235NH6327XTSA1BSD235NH6327XTSA1
$0.36
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