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BSD314SPEL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 1.5A SOT363-6. Review the specifications below when checking this part for your BOM.
The BSD314SPE is a P-channel OptiMOS™-P 3 small-signal transistor in a PG-SOT-363 package. It features logic-level operation rated at 4.5V and includes ESD protection. The device supports a continuous drain current of -1.5 A and withstands a gate-source voltage of ±20 V. Key electrical parameters include a maximum on-state resistance of 140 mΩ at VGS=-10 V and a breakdown voltage of -30 V. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix and packaging configuration against official Infineon documentation prior to procurement. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, as these attributes are critical for final assembly processes. Ensure compatibility with the intended thermal management strategy given the specified power dissipation limits.
Select this component for applications requiring a P-channel MOSFET with low on-resistance and robust ESD handling capabilities. The logic-level rating simplifies drive circuit design by allowing direct connection to 4.5V logic sources. Consider the thermal resistance characteristics when designing PCB footprints to ensure safe operating area compliance under continuous load conditions.
This part belongs to the OptiMOS™-P 3 family of small-signal transistors manufactured by Infineon Technologies. The series is designed to provide optimized performance for general-purpose switching tasks. The PG-SOT-363 package offers a compact form factor suitable for space-constrained surface-mount applications.
Consult official Infineon replacement guides for verified substitute part numbers. Do not assume cross-compatibility with other P-channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics.
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