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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.88A SOT363
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：880mA
- Rds On (Max) @ Id, Vgs：400mOhm @ 880mA, 2.5V
- Vgs(th) (Max) @ Id：750mV @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs：0.26nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds：78pF @ 10V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
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Overview
The BSD840N L6327 is a dual N-channel enhancement-mode MOSFET from Infineon Technologies, housed in a PG-SOT-363 package. It features an ultra logic level rating for 1.8V operation and is avalanche rated. The device supports a continuous drain current of 0.88 A at 25°C and withstands a drain-source breakdown voltage of 20 V. Key electrical parameters include a maximum on-state resistance of 400 mΩ at VGS=2.5V and 560 mΩ at VGS=1.8V. It operates within a temperature range of -55°C to +150°C and has a power dissipation of 0.5 W.
Feature Summary
- Dual N-channel configuration with enhancement mode operation
- Ultra Logic level capability rated for 1.8V gate drive
- Avalanche rated for robust energy handling
- Qualified according to AEC-Q101 automotive standards
Applications
- Automotive electronic control units
- Low-voltage signal switching circuits
- Logic-level interface applications
Procurement Notes
Verify the specific ordering suffix L6327 against official Infineon documentation to confirm tape and reel specifications. Ensure compatibility with SMD/SMT assembly processes by checking soldering temperature limits. Confirm RoHS compliance and halogen-free status requirements for your manufacturing environment before finalizing procurement.
Selection Notes
Select this component when a dual N-channel MOSFET with low gate threshold voltage is required for 1.8V logic systems. Consider its small PG-SOT-363 footprint for space-constrained designs. Evaluate the 400 mΩ on-resistance at 2.5V and 560 mΩ at 1.8V to ensure it meets efficiency targets for your specific load current and voltage drop requirements.
Part Context
This part belongs to the BSD840N series of OptiMOS™2 small-signal transistors. It is designed as a compact solution for low-power switching tasks. The dual configuration allows for efficient implementation of bridge drivers or differential switches within a minimal surface area, suitable for modern high-density PCB layouts.
Replacement Considerations
Check for direct cross-references in Infineon's selection guides. Verify that any substitute maintains the dual N-channel topology, 20V VDS rating, and PG-SOT-363 package dimensions to ensure mechanical and electrical compatibility without redesign.
