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BSF083N03LQG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSF083N03LQG
- Description：N-CHANNEL POWER MOSFET
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 36W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MG-WDSON-2, CanPAK M™
- Package / Case：3-WDSON
Single FETs, MOSFETs datasheet and documents for BSF083N03LQG
Single FETs, MOSFETs Overview
The BSF083N03LQG is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS2 technology. It features a 30V drain-source voltage (Vdss) and a continuous drain current of 13A at 25°C case temperature. The device is housed in a compact MG-WDSON-2 package with a maximum on-state resistance of 8.3mΩ at Vgs=10V. It operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS2 technology for optimized switching performance
- Low on-state resistance for efficient power handling
- Compact surface-mount WDSON-2-3 package design
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm the specific revision level matches design requirements. Check for moisture sensitivity labeling and storage conditions prior to assembly. Ensure compliance with RoHS directives if applicable to the target market regulations.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low voltage operation and high current density in minimal footprint designs. Evaluate thermal dissipation capabilities against the specific PCB copper area available. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds without excessive losses.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS2 family, designed for general-purpose power switching. It serves as a discrete solution for low-voltage DC-DC conversion tasks where size constraints are critical. The WDSON-2 package offers thermal and electrical advantages over traditional leaded packages.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 30V rating and compatible package dimensions. Verify that alternative components meet the same thermal and electrical performance standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
