BSF450NE7NH3XUMA2

Description：MOSFET N-CH 75V 5A/15A 2WDSON
Series：OptiMOS™ 3
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:ad4e822a06be Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSF450NE7NH3XUMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 5A/15A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSF450NE7NH3XUMA2

Description：MOSFET N-CH 75V 5A/15A 2WDSON
Series：OptiMOS™ 3
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta), 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：3.8V @ 8µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：390 pF @ 37.5 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 18W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2
Package / Case：DirectFET™ Isometric ST

Single FETs, MOSFETs datasheet and documents for BSF450NE7NH3XUMA2

BSF450NE7NH3XUMA2

Single FETs, MOSFETs Overview

The BSF450NE7NH3 is an OptiMOS³ Power-MOSFET with a 75 V drain-source voltage and N-channel configuration. It features a maximum on-state resistance of 45 mΩ at 10 V gate drive and supports a continuous drain current of 15 A at 25 °C case temperature. The device utilizes the CanPAK S MG-WDSON-2 package, which has a low profile under 0.7 mm and enables dual-sided cooling. Key electrical parameters include a total gate charge of 6 nC, input capacitance of 390 pF, and a thermal resistance from junction to case top of 7 K/W.

Single FETs, MOSFETs Feature Summary

Optimized technology for DC/DC converters
Dual-sided cooling capability
Low parasitic inductance design
100% avalanche tested

Single FETs, MOSFETs Applications

DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component meets RoHS compliance standards and JEDEC qualification requirements for the intended target applications before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution with high thermal efficiency is required. The dual-sided cooling feature allows for superior heat dissipation compared to standard single-sided packages. Verify that the system's PCB layout can accommodate the specific pad dimensions of the MG-WDSON-2 package.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS³ family of power MOSFETs designed by Infineon Technologies. It is specifically engineered to provide an excellent figure of merit (gate charge multiplied by on-state resistance) for efficient power conversion. The CanPAK S series focuses on minimizing footprint while maximizing thermal performance through advanced packaging techniques.