ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 19A/41A TISON8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：19A, 41A
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 12V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PG-TISON-8
- Grade：-
- Qualification：-
Download product information
Overview
The BSG0811ND is a dual asymmetric N-channel OptiMOS™5 MOSFET in a PG-TISON8-4 Power Block package. It features a 25 V drain-source voltage and logic-level gate threshold for efficient 4.5 V drive. Q1 offers a maximum RDS(on) of 4 mΩ at 4.5 V, while Q2 provides 1.1 mΩ. Continuous drain current reaches 50 A per channel at TC=70°C. The device integrates monolithic Schottky-like diodes with forward currents up to 50 A. Thermal resistance from junction to case is 4.3 K/W for Q1 and 1.8 K/W for Q2.
Feature Summary
- Dual asymmetric N-channel configuration optimized for high-performance buck converters
- Logic level operation rated for 4.5 V gate drive
- Monolithically integrated Schottky-like body diodes
- Qualified according to JEDEC standards
Applications
- High-performance synchronous buck converters
- Point-of-load (POL) power supply modules
- DC-DC conversion stages requiring low-side and high-side integration
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel packaging format. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by IEC61249-2-21. Ensure the procurement documentation references the correct datasheet revision to validate thermal and electrical parameters against the latest Infineon specifications.
Selection Notes
Select this component when designing buck converters requiring asymmetric current handling capabilities within a compact footprint. The low gate charge and fast switching times support high-frequency operation. Evaluate the thermal resistance values against the PCB copper area constraints to ensure adequate heat dissipation for the intended continuous load conditions.
Part Context
This part belongs to the OptiMOS™5 family, utilizing trench technology for enhanced performance. It is designed specifically for applications demanding high efficiency and robust thermal characteristics in small surface-mount packages. The asymmetric design allows for tailored optimization of the high-side and low-side switches within a single integrated unit.
Replacement Considerations
BSG0811NDI
FAQ
What is the maximum avalanche energy rating for Q1?
The single pulse avalanche energy (EAS) for Q1 is rated at 30 mJ under conditions of ID=10 A and RGS=25 Ω.
How does the package facilitate thermal management?
The Power Block package provides dedicated thermal pads with junction-to-case thermal resistances of 4.3 K/W for Q1 and 1.8 K/W for Q2, allowing direct mounting to heatsinks or PCB copper planes.
Is the device suitable for automotive applications?
The datasheet states the device is qualified according to JEDEC standards for target applications but does not explicitly list AEC-Q101 certification in the provided text.
