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BSH105,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 20V 1.05A TO236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSH105,215
- Description：MOSFET N-CH 20V 1.05A TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.05A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：200mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：570mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs：3.9 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：152 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：417mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSH105,215
Single FETs, MOSFETs Overview
The BSH105,215 is an N-channel enhancement mode MOSFET from Nexperia. It features a drain-source voltage of 20 V and a continuous drain current of 1.05 A at 25°C. The device has a maximum on-state resistance of 250 mΩ at VGS = 2.5 V and a typical gate charge of 3.9 nC. Operating temperature ranges from -55°C to 150°C with a total power dissipation of 417 mW at 25°C.
Single FETs, MOSFETs Feature Summary
- Logic level compatible for low voltage drive applications
- Fast switching characteristics suitable for high speed digital interfacing
- Very low threshold voltage ideal for battery powered systems
Single FETs, MOSFETs Applications
- Battery powered applications
- High speed digital interfacing
Single FETs, MOSFETs Procurement Notes
Verify the component against official Nexperia datasheets to confirm electrical parameters and package dimensions. Ensure compatibility with specific circuit requirements regarding thermal management and voltage ratings before integration into designs.
Single FETs, MOSFETs Selection Notes
Select this component for circuits requiring low voltage logic interface capabilities. Consider the subminiature SOT-23 package for space-constrained surface mount designs. Evaluate thermal performance based on expected ambient temperatures and load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the BSH105 series of N-channel enhancement mode MOS transistors. It is designed as a field-effect power transistor offering fast switching and low threshold voltage characteristics within a compact surface mounting package.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference specifications carefully to ensure equivalent electrical and mechanical properties are maintained in the design.
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