BSH111,235

Single FETs, MOSFETs Overview

The Nexperia BSH111,235 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It operates with a drain-source voltage of 55 V and a continuous drain current of 335 mA at 25 °C. The device features low on-state resistance, ranging from 2.3 Ω to 8.0 Ω depending on gate drive conditions. Total power dissipation reaches 0.83 W at 25 °C. Junction temperature spans -65 °C to +150 °C. The component is housed in a SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchMOS technology for enhanced performance
• Provides very fast switching capabilities
• Features a low threshold voltage for efficient logic-level driving
• Housed in a subminiature surface mount package

Single FETs, MOSFETs Applications

• Battery management systems
• High speed switch circuits
• Logic level translator applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSH111,235 against the manufacturer's latest documentation to confirm current production status and exact pinout configuration. Ensure compatibility with the SOT-23 footprint during PCB layout. Confirm RoHS compliance requirements align with project specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low gate charge and rapid switching speeds within a compact form factor. Evaluate thermal constraints carefully as power dissipation decreases significantly at elevated solder point temperatures. Verify that the required drain current remains within the safe operating area limits defined by the datasheet curves.

Single FETs, MOSFETs Part Context

This device belongs to the Nexperia discrete semiconductor portfolio, specifically designed as a single N-channel MOSFET. It represents a transition from legacy Philips Semiconductors branding while maintaining established electrical characteristics. The part serves as a standard solution for general-purpose switching tasks in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout assignments and meets or exceeds the 55 V breakdown voltage and 335 mA current ratings specified for the original component.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for gate-source voltage is ±10 V.

How does junction temperature affect on-state resistance?

On-state resistance increases with higher junction temperatures; it rises from a typical 2.3 Ω at 25 °C to approximately 7.4 Ω at 150 °C under specific test conditions.