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BSH203,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 30V 470MA TO236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSH203,215
- Description：MOSFET P-CH 30V 470MA TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：470mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：900mOhm @ 280mA, 4.5V
- Vgs(th) (Max) @ Id：680mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：110 pF @ 24 V
- FET Feature：-
- Power Dissipation (Max)：417mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSH203,215
Single FETs, MOSFETs Overview
The BSH203,215 is a P-channel enhancement mode MOSFET manufactured by Nexperia. It features a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -0.47 A at 25 °C. The device utilizes a subminiature SOT-23 surface-mount package with three leads. Key electrical parameters include a maximum on-state resistance (RDS(ON)) of 1.1 Ω at VGS = -2.5 V and a gate threshold voltage (VGS(TO)) ranging from -0.4 V to -0.68 V. Total power dissipation is rated at 0.417 W at 25 °C ambient temperature.
Single FETs, MOSFETs Feature Summary
- Logic level compatible operation suitable for low-voltage digital interfacing
- Extremely fast switching characteristics for high-speed applications
- Very low threshold voltage enabling efficient battery-powered designs
Single FETs, MOSFETs Applications
- Battery powered applications
- High speed digital interfacing
- Power management circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a compact P-channel switch with logic-level compatibility. Ensure the operating voltage does not exceed the -30 V drain-source limit. Consider the thermal resistance and derating curves if the ambient temperature exceeds 25 °C or if continuous current approaches the maximum rating.
Single FETs, MOSFETs Part Context
This part belongs to the BSH series of small-signal MOS transistors designed for general-purpose switching. It is housed in the SOT-23 package, which is widely used in portable electronics due to its small footprint. The device serves as a direct replacement for older Philips Semiconductors parts with equivalent specifications.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility and absolute maximum ratings against existing designs. Verify that the new source's RDS(ON) and threshold voltage meet the circuit requirements.
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